vishay siliconix sup90n08-6m8p document number: 69538 s09-2435-rev. c, 16-nov-09 www.vishay.com 1 n-channel 75-v (d-s) mosfet features ? trenchfet ? power mosfet ? 175 c junction temperature ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? power supply - secondary synchronous rectification ? industrial product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 75 0.0068 at v gs = 10 v 90 d 75 t o-220ab t op v i e w gd s ordering information: sup90n08-6m8p-e3 (lead (pb)-free) n-channel mosfet g d s notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 75 v gate-source voltage v gs 22 continuous drain current (t j = 175 c) t c = 25 c i d 90 d a t c = 70 c 90 d pulsed drain current i dm 240 avalanche current i as 50 single avalanche energy a l = 0.1 mh e as 125 mj maximum power dissipation a t c = 25 c p d 272 b w t a = 25 c c 3.75 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.55 rohs complian t
www.vishay.com 2 document number: 69538 s09-2435-rev. c, 16-nov-09 vishay siliconix sup90n08-6m8p notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 75 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 75 v, v gs = 0 v 1 a v ds = 75 v, v gs = 0 v, t j = 125 c 50 v ds = 75 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds 10 v, v gs = 10 v 70 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0056 0.0068 v gs = 10 v, i d = 20 a, t j = 125 c 0.009 0.011 forward transconductance a g fs v ds = 15 v, i d = 20 a 50 s dynamic b input capacitance c iss v gs = 0 v, v ds = 30 v, f = 1 mhz 4620 pf output capacitance c oss 517 reverse transfer capacitance c rss 247 total gate charge c q g v ds = 30 v, v gs = 10 v, i d = 50 a 75 115 nc gate-source charge c q gs 25.5 gate-drain charge c q gd 20 gate resistance r g f = 1 mhz 1.2 2.4 tu r n - o n d e l ay t i m e c t d(on) v dd = 30 v, r l = 0.6 i d ? 50 a, v gen = 10 v, r g = 1 16 30 ns rise time c t r 11 20 turn-off delay time c t d(off) 24 40 fall time c t f 10 20 source-drain diode ratings and characteristics t c = 25 c b continuous current i s 85 a pulsed current i sm 240 forward voltage a v sd i f = 20 a, v gs = 0 v 0.83 1.5 v reverse recovery time t rr i f = 75 a, di/dt = 100 a/s 60 100 ns peak reverse recovery current i rm(rec) 3.3 4.5 a reverse recovery charge q rr 100 150 nc
vishay siliconix sup90n08-6m8p document number: 69538 s09-2435-rev. c, 16-nov-09 www.vishay.com 3 typical characteristics 25 c, unless otherwise noted output characteristics transfer characteristics on-resistance vs. gate-to-source voltage 0 20 40 60 8 0 100 120 012345 v ds ) v ( e g a t l o v e c r u o s - o t - n i a r d - 5 v v gs = 10 v thr u 7 v - drain c u rrent (a) i d 6 v 25 c 0 20 40 60 8 0 100 0 1224364 8 60 v gs - gate-to-so u rce v oltage ( v ) - transcond u ctance (s) g fs t c = - 55 c 125 c 0.00 0.01 0.02 0.03 0.04 0.05 4567 8 910 v gs - gate-to-so u rce v oltage ( v ) - on-resistance ( ) r ds(on) i d = 20 a 150 c 25 c transconductance on-resistance vs. drain current capacitance 0 20 40 60 8 0 100 120 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 25 c - 55 c t c = 125 c 0.0050 0.0052 0.0054 0.0056 0.005 8 0.0060 0204060 8 0 100 i d - drain c u rrent (a) v gs = 10 v - on-resistance ( ) r ds(on) c rss 0 1200 2400 3600 4 8 00 6000 0 1530456075 v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c iss c oss
www.vishay.com 4 document number: 69538 s09-2435-rev. c, 16-nov-09 vishay siliconix sup90n08-6m8p typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature gate charge source-drain diode forward voltage 0 2 4 6 8 10 0 1734516 88 5 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs i d = 50 a v ds = 30 v v ds = 60 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 25 c 150 c v sd - so u rce-to-drain v oltage ( v ) 0.001 0.01 0.1 1.0 10 100 - so u rce c u rrent (a) i s 74 7 8 8 2 8 6 90 94 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) i d = 1 ma v ds (normalized) threshold voltage on-resistance vs. junction temperature single pulse avalanche current capability vs. temperature 0.5 0. 8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) i d = 20 a ( n ormalized) - on-resistance r ds(on) v gs = 10 v - 2.2 - 1.6 - 1.0 - 0.4 0.2 0. 8 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a v ariance ( v ) v gs(th) t j - j u nction temperat u re (c) i d = 5 ma t a v (s) 100 10 1 25 c 150 c 0.0001 0.01 0.001 1.0 1 . 0 1 0 0 0 0 . 0 i da v (a)
vishay siliconix sup90n08-6m8p document number: 69538 s09-2435-rev. c, 16-nov-09 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69538 . single pulse avalanche current capability vs. time 0 31 62 93 124 155 0 25 50 75 100 125 150 175 t c - case temperat u re (c) - drain c u rrent (a) i d package limited safe operating area 1000 10 0.1 1 10 100 0.1 100 t c = 25 c single p u lse - drain c u rrent (a) i d 1 100 ms dc 10 ms 1 ms 100 s v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified limited b y r * ds(on) normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02
document number: 71195 www.vishay.com revison: 01-nov-10 1 package information vishay siliconix to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm * m 3 2 1 l l(1) d h(1) q ? p a f j(1) b (1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x10-0416-rev. m, 01-nov-10 dwg: 5471
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
